Erratum: Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited (Journal of Applied Physics (2011) 110 (063519))

Journal of Applied Physics

Volumn 110, Issue 12, 2011, Pages

  Vanhellemont, Jan ^a  

^a GHENT UNIVERSITY   (Belgium)

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Indexed keywords

EID: 84855327132     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3674273     Document Type: Erratum

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