Vacancy-group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 23, 2004, Pages 1-7

  Markevich, V P ^a   Hawkins, I D ^a   Peaker, A R ^a   Emtsev, K V ^b   Emtsev, V V ^b   Litvinov, V V ^c   Murin, L I ^d   Dobaczewski, L ^e  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

^c BELARUSIAN STATE UNIVERSITY   (Belarus)

^d INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^e INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; ARSENIC; BISMUTH; GERMANIUM; OXYGEN; PHOSPHORUS;

ARTICLE; ATOM; BINDING SITE; COMPLEX FORMATION; CRYSTAL; ELECTRIC CAPACITANCE; ELECTRON; ENERGY; ENTROPY; FIELD EMISSION; GAMMA IRRADIATION; IONIZATION; MOLECULAR DYNAMICS; MOLECULAR INTERACTION; MOLECULAR SIZE; NEUTRON CAPTURE THERAPY; ROOM TEMPERATURE; SURFACE CHARGE; TEMPERATURE DEPENDENCE; THERMAL CONDUCTIVITY; THERMOSTABILITY;

EID: 13944257280     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.235213     Document Type: Article

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