Impact of the chemical concentration on the solid-phase epitaxial regrowth of phosphorus implanted preamorphized germanium

Journal of Applied Physics

Volumn 105, Issue 9, 2009, Pages

  Simoen, E ^a,b,c   Brugre A ^a   Satta, A ^a   Firrincieli, A ^a   Van Daele, B ^a   Brijs, B ^a   Richard, O ^a   Geypen, J ^a   Meuris, M ^a   Vandervorst, W ^a  

^a IMEC   (Belgium)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL CONCENTRATIONS; METASTABLE SOLIDS; P-TYPE; PHOSPHORUS CONCENTRATION; RUTHERFORD BACK-SCATTERING; SOLID PHASE EPITAXIAL REGROWTH;

PHOSPHORUS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

GERMANIUM;

EID: 67249137410     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3125459     Document Type: Article

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