Diffusion and activation of phosphorus in germanium

Materials Science in Semiconductor Processing

Volumn 11, Issue 5, 2008, Pages 372-377

  Tsouroutas, P ^a   Tsoukalas, D ^a   Zergioti, I ^a   Cherkashin, N ^b   Claverie, A ^b  

^a NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^b CEMES CNRS   (France)

Author keywords

Activation; Annealing; Diffusion; Germanium; Laser; Phosphorus; Simulation

Indexed keywords

ACTIVATION; ACTIVATION BEHAVIOR; ANNEALED SAMPLES; ANNEALING PROCESS; CHEMICAL PROFILES; CONVENTIONAL ANNEALING; DOPANT DIFFUSION; DOPANT DIFFUSIVITY; DOPANT LOSS; DOPANT PROFILE; INTRINSIC DIFFUSION; LASER ANNEALING; MELTING THRESHOLD; ND-YAG LASERS; OUT-DIFFUSION; RESEARCH REPORTS; SEGREGATION MODEL; SIMULATION; THERMAL PROCESSING; VACANCY MODELS; VAN DER PAUW METHOD;

ANNEALING; DIFFUSION; ELECTRIC RESISTANCE; EXPERIMENTS; GERMANIUM; ION BOMBARDMENT; ION IMPLANTATION; LASERS; NEODYMIUM LASERS; PHOSPHORUS; PULSED LASER APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SIMULATORS; TRANSMISSION ELECTRON MICROSCOPY;

SIMULATED ANNEALING;

EID: 70349980170     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2008.09.005     Document Type: Article

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