A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B and usage in device simulation

Journal of Applied Physics

Volumn 100, Issue 11, 2006, Pages

  Altermatt, P P ^a   Schenk, A ^b,c   Schmithusen B ^b   Heiser, G ^d  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b ETH ZURICH   (Switzerland)

^c SYNOPSYS SWITZERLAND LLC   (Switzerland)

^d UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CARRIER CONCENTRATION; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; IONIZATION; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING;

CRYSTALLINE SILICON; DENSITY OF STATES; DOPANT DENSITY; PARAMETRIZATION;

SILICON;

EID: 33845762895     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2386935     Document Type: Article

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