Doping of germanium by phosphorus implantation: Prediction of diffused profiles with simulation

Materials Science and Engineering: B

Volumn 154-155, Issue 1-3, 2008, Pages 60-63

  Koffel, S ^a   Scheiblin, P ^a   Claverie, A ^b   Mazzocchi, V ^a  

^a CEA LETI   (France)

^b CEMES CNRS   (France)

Author keywords

Diffusion; Germanium; Phosphorus; Simulation

Indexed keywords

BUDGET CONTROL; DIFFUSION; GERMANIUM; POINT DEFECTS; SILICON WAFERS;

AMORPHIZATIONS; CHARGE STATE; DIFFUSION MECHANISMS; DIFFUSION MODEL; ENERGY; GERMANIUMS (GE); OPTIMISATIONS; PROCESS TIME; SIMS PROFILE; SIMULATION;

PHOSPHORUS;

EID: 56949095297     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.08.007     Document Type: Article

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