Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited

Journal of Applied Physics

Volumn 110, Issue 6, 2011, Pages

  Vanhellemont, Jan ^a  

^a GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; AS-GROWN; AS-GROWN CRYSTAL; CRITICAL VALUE; CRYSTAL DIAMETER; CRYSTAL PULLING; DIFFUSIVITIES; EXPERIMENTAL EVIDENCE; HOT ZONE; INTRINSIC POINT DEFECTS; MELT-SOLID INTERFACES; SELF-INTERSTITIAL; SILICON SINGLE CRYSTALS; STRESS EFFECTS; TEMPERATURE AND STRESS GRADIENT; TEMPERATURE GRADIENT; TEMPERATURE WINDOW; THERMAL EQUILIBRIUMS;

CALCULATIONS; DIFFRACTIVE OPTICS; DIFFUSION; EXPERIMENTS; POINT DEFECTS; SILICON WAFERS; THERMAL GRADIENTS; THERMODYNAMICS;

SINGLE CRYSTALS;

EID: 80053498503     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3641635     Document Type: Article

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