Implantation defects and n-type doping in Ge and Ge rich SiGe

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 152-154

  Peaker, A R ^a   Markevich, V P ^a   Hamilton, B ^a   Hawkins, I D ^a   Slotte, J ^b   Kuitunen, K ^b   Tuomisto, F ^b   Satta, A ^c   Simoen, E ^c   Abrosimov, N V ^d  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b AALTO UNIVERSITY   (Finland)

^c IMEC   (Belgium)

^d LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Activation; DLTS; Donor doping; Germanium; Ion implantation; SiGe alloy

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; ION BOMBARDMENT; ION IMPLANTATION; MASS SPECTROMETRY; PHOSPHORUS; POSITRONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS; VANADIUM COMPOUNDS;

ACTIVATION; ANNEAL TEMPERATURES; CHANNEL MATERIALS; DEFECTS EVOLUTIONS; DLTS; DONOR ACTIVATIONS; DONOR DOPING; DOPING; IMPLANTATION DEFECTS; LOW ACTIVATIONS; NMOS TRANSISTORS; PHOSPHOROUS IMPLANTS; SCALED CMOS; SECONDARY IONS; SHALLOW JUNCTIONS; SIGE ALLOY; SILICON-GERMANIUM; SPREADING RESISTANCES;

GERMANIUM;

EID: 54849418594     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.088     Document Type: Article

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