Characteristics of Al 2O 3 thin films deposited using dimethylaluminum isopropoxide and trimethylaluminum precursors by the plasma-enhanced atomic-layer deposition method

Journal of the Korean Physical Society

Volumn 48, Issue 1, 2006, Pages 131-136

  Koo, Jachyoung ^a   Kim, Seokhoon ^a   Jeon, Sangmin ^a   Jeon, Hyeongtag ^a   Kim, Yangdo ^b   Won, Youngdo ^a  

^a Hanyang University   (South Korea)

^b Pusan National University   (South Korea)

Author keywords

Al 2o 3; DMAI; PEALD; TMA

Indexed keywords

EID: 32044450817     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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