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Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 2323-2329

Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in situ O3 oxidation

(2) Kim, Seong Keun a Hwang, Cheol Seong a

a Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ALUMINUM COMPOUNDS; DIELECTRIC FILMS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC PROPERTIES; ELLIPSOMETRY; OPTICAL MICROSCOPY; RAPID THERMAL ANNEALING; SILICON COMPOUNDS; SILICON WAFERS; THERMOOXIDATION;

ATOMIC LAYER DEPOSITION (ALD); CHEMICAL EXCHANGE REACTIONS; EQUIVALENT OXIDE THICKNESS (EOT); OXIDANTS;

THIN FILMS;

EID: 4344595811 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1769090 Document Type: Article

Times cited : (75)

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