Dependence of atomic layer-deposited Al2O3 films characteristics on growth temperature and Al precursors of Al(CH3)3 and AlCl3

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 6, 1997, Pages 2993-2997

  Yun, Sun Jin ^a   Lee, Kyung Ho ^b   Skarp, Jarmo ^c   Kim, Hae Rim ^a   Nam, Kee Soo ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Eaton Korea Ltd   (South Korea)

^c Microchemistry Ltd   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000364381     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580895     Document Type: Article

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