The study of thermal silicon dioxide electrets formed by corona discharge and rapid-thermal annealing

Journal of Applied Physics

Volumn 109, Issue 5, 2011, Pages

  Kho, Teng C ^a   Baker Finch, Simeon C ^a   McIntosh, Keith R ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CORONA CHARGE; CORONA DISCHARGES; CRYSTALLINE SILICONS; ELECTRONS AND HOLES; ENERGY LEVEL; HIGH EFFICIENCY; INTERFACE RECOMBINATION; LOW DENSITY; RAPID THERMAL ANNEAL; SI SOLAR CELLS; SI WAFER; SILICON DIOXIDE; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES; THERMAL SILICON; THERMAL-ANNEALING;

ELECTRETS; ELECTRIC CORONA; PASSIVATION; POLYETHERIMIDES; RAPID THERMAL PROCESSING; SILICA; SILICON; SILICON OXIDES; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79952999504     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3559260     Document Type: Article

References (38)

1. G. Sessler, Topics in Applied Physics Volume 33: Electrets, edited by, G. Sessler, (Springer-Verlag, Berlin, 1987).
2. C. Thielemann and G. Hess, Sens. Actuators, A 61, 352 (1997). 10.1016/S0924-4247(97)80287-7
3. D. Hohm and R. Gerhard-Multhaupt, J. Acoust. Soc. Am. 75, 1297 (1984). 10.1121/1.390738
4. A. Amjadi and C. Thielemann, IEEE Trans. Dielectr. Electr. Insul. 3, 494 (1996). 10.1109/94.536727
5. B. Fallone, B. MacDonald, and L. Ryner, IEEE Trans. on Electr. Insul. 28, 143 (1994). 10.1109/14.192251
6. Y. Fei, Z. Xu, and C. Chen, Charge storage stability of SiO2 film electret., in Proceedings of IEEE SouthEastCon (IEEE, New York, 2001), pp. 1-7. (Pubitemid 32478204)
7. T. Minami, T. Utsobo, T. Yamatani, T. Miyata, and Y. Ohbayashi, Thin Solid Films 426, 47 (2003). 10.1016/S0040-6090(02)01302-0
8. N. Yuan and J. Li, Appl. Surf. Sci. 252, 455 (2005). 10.1016/j.apsusc. 2005.01.025 (Pubitemid 41276939)
9. P. Gnther and A. Mathewson, Novel coatings for solar cells with the capability of controlled charge storage., in Proceedings of 1st WCPEC, (IEEE, New York, 1994), pp. 1523-1526.
10. R. Hezel and K. Jaeger, J. Electrochem. Soc. 136, 518 (1989). 10.1149/1.2096673
11. B. Hoex, S. B. S. Heil, E. Langereis, M. C. M. van de Sanden, and W. M. M. Kessels, Appl. Phys. Lett. 89, 042112 (2006). 10.1063/1.2240736 (Pubitemid 44147566)
12. S.W. Glunz, D. Biro, S. Rein, and W. Warta, J. Appl. Phys. 86 (1), 683 (1999). 10.1063/1.370784
13. J. Zhao, A. Wang, P. P. Altermatt, and M. A. Green, Appl. Phys. Lett. 66, 3636 (1995). 10.1063/1.114124
14. R. A. Sinton, P. J. Verlinden, R. A. Crane, R. M. Swanson, C. Tilford, J. Perkins, and K. Garrison, Large-area 21 efficient Si solar cells., in Proceedings of the 23rd IEEE Photovoltaics Specialists Conference (IEEE, New York, 1993), pp. 157-161.
15. S.W. Glunz, J. Knobloch, C. Hebling, and W. Wettling, The range of high efficiency silicon solar cells fabricates at Fraunhofer ISE., in Proceedings of the 26th IEEE Photovoltaic Specialists Conference (IEEE, New York, 1997), pp. 231-234.
16. W. P. Mulligan, M. J. Cudzinovic, D. M. de Ceuster, K. R. McIntosh, D. H. Rose, D. D. Smith, and R. M. Swanson, Manufacture of solar cells with 21 efficiency., in Proceedings of the 19th EU Photovoltaic Solar Energy Conference (2004), pp. 387-390.
17. K. J. Weber, A. W. Blakers, M. J. Stocks, J. H. Babaei, V. A. Everett, A. J. Neuendorf, and P. J. Verlinden, IEEE Electron Device Lett. 25, 37 (2004). 10.1109/LED.2003.821600
18. A. G. Aberle, Crystalline Silicon Solar Cells: Advanced Surface Passivation and Analysis (University of New South Wales, Sydney, 1999), p. 78.
19. S. W. Glunz, A. B. Sproul, W. Warta, and W. Wettling, J. Appl. Phys. 75, 1611 (1994). 10.1063/1.356399
20. M. J. Kerr and A. Cuevas, Semicond. Sci. and Technol. 17 35 (2002). 10.1088/0268-1242/17/1/306 (Pubitemid 34080680)
21. D. K. Schroder, Semiconductor Material and Device Characterisation. (Wiley, New York 1990).
22. H. Jin, K. J. Weber, N. C Dang, and W. E. Jellett, Appl. Phys. Lett. 90, 262109 (2007). 10.1063/1.2749867 (Pubitemid 47141112)
23. www.sintoninstruments.com
24. D. Kane and R. Swanson, Measurement of the emitter saturation current by a contactless photoconductivity decay method., in Proceedings of the 18th IEEE Photovoltaics Specialists Conference (IEEE, New York, 1985), pp. 578-583. (Pubitemid 16627428)
25. K. J. Weber, H. Jin, C. Zhang, N. Nursam, W. E. Jellet, and K. R. McIntosh, Surface passivation using dielectric films: How much charge is enough? in Proceedings of 24th European Photovoltaic Solar Energy Conference (WIP-Renewable Energies, Mnich, 2009), pp. 534-537.
26. A. Cuevas and D. H. Macdonald, Sol. Energy 76, 255 (1994). 10.1016/j.solener.2003.07.033
27. M. J. Kerr and A. Cuevas, J. Appl. Phys. 91, 2473 (2002). 10.1063/1.1432476 (Pubitemid 34167776)
28. A. G. Aberle, S. Glunz, and W. Warta, J. Appl. Phys. 71, 4422 (1992). 10.1063/1.350782
29. R. B. M. Girisch, R. P. Mertens, and R. F. De Keersmaecker, IEEE Trans. Electron Devices 35, 203 (1988). 10.1109/16.2441 (Pubitemid 18596273)
30. H. C. Lai, P. Murphy, and M. Latour, Improved silicon dioxide electret for silicon-based integrated microphones., in Proceedings of the 18th International Symposium on Electrets (IEEE, New York, 1994), pp. 949-954
31. A. Sprenkels, W. Olthuis, and P. Bergveld, The application of silicon dioxide as an electret material., in Proceedings of the 6th International Symposium on Electrets (IEEE, New York, 1988), pp. 165-169.
32. J. Voorthuyzen, K. Keskin, and P. Bergveld, Surf. Sci. 187, 201 (1987). 10.1016/S0039-6028(87)80132-2
33. T. C. Kho, S. C. Baker-Finch, and K. R. McIntosh, Towards a silicon dioxide electret for silicon solar cells., in Proceedings of 25th European Photovoltaic Solar Energy Conference (WIP-Renewable Energies, Mnich, 2010), pp. 1138-1142.
34. K. R. McIntosh and X. Dai, Damp-heat degradation and repair of oxide-passivated silicon., Phys. Status Solidi A (to be published).
35. T. C. Kho, L. E. Black, and K. R. McIntosh, Degradation of Si-SiO2 interfaces during rapid thermal annealing., in Proceedings of the 24th EU PVSEC (WIP-Renewable Energies, Mnich, 2009), pp. 1586-1590.
36. R. Kressmann, G. M. Sessler, and P. Gunther, IEEE Trans. Dielectr. Electr. Insul. 3, 607 (1996). 10.1109/94.544184
37. G. Sessler, Physical principles of electrets., in Topics in Applied Physics Volume 33: Electrets, edited by, G. Sessler, (Springer-Verlag, Berlin, 1987), pp. 13-80.
38. S. C. Baker-Finch and K. R. McIntosh, Characterisation of corona-charged oxide-passivated silicon., in Proceedings of the 46th ANZSES Conference (ANZSES, Melbourne, 2008), paper 304.