Very low-pressure VLP-CVD growth of high quality γ-Al2O3 films on silicon by multi-step process

Journal of Crystal Growth

Volumn 236, Issue 1-3, 2002, Pages 261-266

  Tan, Liwen ^a   Zan, Yude ^a   Wang, Jun ^a   Wang, Qiyuan ^a   Yu, Yuanhuan ^a   Wang, Shurui ^a   Liu, Zhongli ^a   Lin, Lanying ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A3. Metalorganic chemical vapor deposition

Indexed keywords

ALUMINA; ANNEALING; CRYSTALLINE MATERIALS; DIELECTRIC PROPERTIES; ETCHING; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SUBSTRATES;

MULTI-STEP PROCESSES;

SEMICONDUCTING FILMS;

EID: 0036499139     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02159-5     Document Type: Article

References (13)