메뉴 건너뛰기




Volumn , Issue , 2009, Pages 331-439

Negative Bias Temperature Instabilities in pMOSFET Devices

Author keywords

NBTI (a pMOSFET wearout mechanism) and NBTI stress bias configuration; NBTI damage and NBTI modeling in correct end of life extrapolation; Negative bias temperature instabilities (NBTI) in pMOSFET devices

Indexed keywords


EID: 84855922022     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9780470455265.ch4     Document Type: Chapter
Times cited : (12)

References (116)
  • 3
    • 0017493207 scopus 로고
    • Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices
    • K. O. Jeppson, C. M. Svensson. Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices. J. Appl. Phys., 48: 1977, pp 2004-2014.
    • (1977) J. Appl. Phys. , vol.48 , pp. 2004-2014
    • Jeppson, K.O.1    Svensson, C.M.2
  • 5
    • 4444341905 scopus 로고    scopus 로고
    • Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETs
    • Sep
    • S. Mahapatra, P. B. Kumar, M. A. Alam. Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETs. IEEE Trans. on Electron Devices, 51(9): Sep 2004.
    • (2004) IEEE Trans. on Electron Devices , vol.51 , Issue.9
    • Mahapatra, S.1    Kumar, P.B.2    Alam, M.A.3
  • 7
    • 36449005547 scopus 로고
    • Mechanisms of negative-bias temperature instability
    • C. E. Blat, E. H. Nicollian, E. H. Poindexter. Mechanisms of negative-bias temperature instability. J. Appl. Phys., 69: 1991, pp 1712-1720.
    • (1991) J. Appl. Phys. , vol.69 , pp. 1712-1720
    • Blat, C.E.1    Nicollian, E.H.2    Poindexter, E.H.3
  • 11
    • 10044266222 scopus 로고    scopus 로고
    • A comprehensive model of PMOS NBTI degradation, Microelectron
    • Reliab
    • M. A. Alam, S. Mahapatra. A comprehensive model of PMOS NBTI degradation, Microelectron. Reliab, 45: 2005, pp 71-81.
    • (2005) , vol.45 , pp. 71-81
    • Alam, M.A.1    Mahapatra, S.2
  • 13
    • 84889469132 scopus 로고    scopus 로고
    • Nature of the Pb1 defect in (100) Si/SiO2 as revealed by electron spin resonance 29Si hyperfine structure/Microelectron
    • A. Stesmans, V. V. Afanasev. Nature of the Pb1 defect in (100) Si/SiO2 as revealed by electron spin resonance 29Si hyperfine structure/Microelectron. Eng., 63: 1999, pp 5776-5793.
    • (1999) Eng. , vol.63 , pp. 5776-5793
    • Stesmans, A.1    Afanasev, V.V.2
  • 15
    • 84889496498 scopus 로고    scopus 로고
    • Tutorial Notes, Adv. Rel. Topics. IEEE IRPS:, Section 223.
    • P. Lenahan. IEEE Rel. Phys. Tutorial Notes, Adv. Rel. Topics. IEEE IRPS: 2002, Section 223.
    • (2002) IEEE Rel. Phys.
    • Lenahan, P.1
  • 17
  • 19
    • 0037972838 scopus 로고    scopus 로고
    • Evidence for hydrogen-related defects during NBTI stress in p-MOSFETs
    • V. Huard, F. Monsieur, G. Ribes, S. Bruyere. Evidence for hydrogen-related defects during NBTI stress in p-MOSFETs, IRPS 2003.
    • (2003) IRPS
    • Huard, V.1    Monsieur, F.2    Ribes, G.3    Bruyere, S.4
  • 20
    • 0141426793 scopus 로고    scopus 로고
    • Experimental evidence for generation of bulk traps by negative bias temperature stress and their impact on integrity of direct-tunneling gate dielectrics
    • S. Tsuijkawa, K. Watanabe, R. Tsuchiya, K. Ohnishi, J. Yugami. Experimental evidence for generation of bulk traps by negative bias temperature stress and their impact on integrity of direct-tunneling gate dielectrics. 2003 Sym. on VLSI Technology.
    • 2003 Sym. on VLSI Technology.
    • Tsuijkawa, S.1    Watanabe, K.2    Tsuchiya, R.3    Ohnishi, K.4    Yugami, J.5
  • 21
    • 10044244638 scopus 로고    scopus 로고
    • Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectrics
    • S. Tsujkawa, J. Yugami. Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectrics. Microelectronics Reliability, 45: 2005, pp 65-69.
    • (2005) Microelectronics Reliability , vol.45 , pp. 65-69
    • Tsujkawa, S.1    Yugami, J.2
  • 26
    • 0036932280 scopus 로고    scopus 로고
    • NBTI mechanism in ultra-thin gate dielectrics nitrogen originated mechanism in SiON
    • Y. Mitani, M. Nagamine, H. Satake, A. Toriumi. NBTI mechanism in ultra-thin gate dielectrics nitrogen originated mechanism in SiON. IEDM 2002.
    • (2002) IEDM
    • Mitani, Y.1    Nagamine, M.2    Satake, H.3    Toriumi, A.4
  • 27
    • 0033750707 scopus 로고    scopus 로고
    • Bias-temperature degradation of pMOSFETs: Mechanism and suppression
    • M. Makabe, T. Kubota, T. Kitano. Bias-temperature degradation of pMOSFETs: Mechanism and suppression. IRPS, 20: 2000, pp 205-209.
    • (2000) IRPS , vol.20 , pp. 205-209
    • Makabe, M.1    Kubota, T.2    Kitano, T.3
  • 28
    • 84889334035 scopus 로고    scopus 로고
    • IRW
    • Y. Chen et al. IRW 2000.
    • (2000)
    • Chen, Y.1
  • 29
    • 0036932324 scopus 로고    scopus 로고
    • A predictive reliability model for PMOS bias temperature degradation
    • S. Mahapatra, M. A. Alam. A predictive reliability model for PMOS bias temperature degradation. IEDM 2002.
    • (2002) IEDM
    • Mahapatra, S.1    Alam, M.A.2
  • 30
    • 0003514380 scopus 로고    scopus 로고
    • Fundamental of Modern VLSI Devices.
    • Cambridge University Press, Cambridge:
    • Y. Taur, T. H. Nin. Fundamental of Modern VLSI Devices. Cambridge University Press, Cambridge: 1998.
    • (1998)
    • Taur, Y.1    Nin, T.H.2
  • 31
    • 0032633963 scopus 로고    scopus 로고
    • Bias temperature instability in scaled p + polysilicon gate pMOSFETs
    • May
    • T. Yamamoto, K. Uwasawa, T. Mogami. Bias temperature instability in scaled p + polysilicon gate pMOSFETs. IEEE Trans. on Electron Devices, 46(5): May 1999.
    • (1999) IEEE Trans. on Electron Devices , vol.46 , Issue.5
    • Yamamoto, T.1    Uwasawa, K.2    Mogami, T.3
  • 32
    • 0037660903 scopus 로고    scopus 로고
    • On the degradation of P-MOSFETs in anlalog and RF Circuits under inhomogeneous negative bias temperature stress
    • Dallas, Texas.
    • C. Schlunder, R. Brederlow, B. Ankele, A. Lil, K. Goser, R. Thewes. On the degradation of P-MOSFETs in anlalog and RF Circuits under inhomogeneous negative bias temperature stress. IRPS 2003, Dallas, Texas.
    • (2003) IRPS
    • Schlunder, C.1    Brederlow, R.2    Ankele, B.3    Lil, A.4    Goser, K.5    Thewes, R.6
  • 33
    • 0022688857 scopus 로고
    • Inversion level capacitance and mobility of very thin gate oxide MOSFETs
    • Mar
    • M. S. Liang et al. Inversion level capacitance and mobility of very thin gate oxide MOSFETs. IEEE Trans. Electron Devices, ED-, 33: Mar 1986, p 409.
    • (1986) IEEE Trans. Electron Devices, ED- , vol.33 , pp. 409
    • Liang, M.S.1
  • 35
    • 0021201529 scopus 로고
    • TED
    • G. Groeseneken et al. TED, 31: 1984, p 42.
    • (1984) , vol.31 , pp. 42
    • Groeseneken, G.1
  • 38
    • 29244455322 scopus 로고    scopus 로고
    • Evidence of two distinct degradation mechanisms from temperature dependence on negative bias stressing of ultrathin gate p-MOSFET
    • Dec
    • D. S. Ang, S. Wang, C. H. Ling. Evidence of two distinct degradation mechanisms from temperature dependence on negative bias stressing of ultrathin gate p-MOSFET, IEEE Electr. Dev. Lett., 26(12): Dec 2005.
    • (2005) IEEE Electr. Dev. Lett. , vol.26 , Issue.12
    • Ang, D.S.1    Wang, S.2    Ling, C.H.3
  • 40
    • 4544257707 scopus 로고    scopus 로고
    • A model for negative bias temperature instability (NBTI) in oxide and high-K pFETS
    • VLSI
    • S. Zafar, B. H. Lee, J. Stathis, A. Callegari, T. Ning. A model for negative bias temperature instability (NBTI) in oxide and high-K pFETS. VLSI 2004.
    • (2004)
    • Zafar, S.1    Lee, B.H.2    Stathis, J.3    Callegari, A.4    Ning, T.5
  • 41
    • 84932126501 scopus 로고    scopus 로고
    • Hole trapping effect on methodology for DC and AC negative bias temperature instability measurements in PMOS
    • IRPS
    • V. Huard, M. Denais. Hole trapping effect on methodology for DC and AC negative bias temperature instability measurements in PMOS, IRPS 2004, pp 40-45.
    • (2004) , pp. 40-45
    • Huard, V.1    Denais, M.2
  • 42
    • 0037005587 scopus 로고    scopus 로고
    • Dynamic NBTI of pMOS transistors and its impact on MOSFET scaling
    • Jul
    • G. Chen, M. F. Li, C. H. Ang, J. Z. Zheng, D. L. Kwong. Dynamic NBTI of pMOS transistors and its impact on MOSFET scaling. IEEE Electron Device Lett., 23(7): Jul 2002, pp 734-736.
    • (2002) IEEE Electron Device Lett. , vol.23 , Issue.7 , pp. 734-736
    • Chen, G.1    Li, M.F.2    Ang, C.H.3    Zheng, J.Z.4    Kwong, D.L.5
  • 43
    • 84889347577 scopus 로고    scopus 로고
    • Dynamic NBTI of PMOS transistors
    • G. Chen et al. Dynamic NBTI of PMOS transistors. Proc. IEEE Reliab. Phys. Symp 2003, pp 196-202.
    • (2003) Proc. IEEE Reliab. Phys. Symp , pp. 196-202
    • Chen, G.1
  • 48
  • 50
    • 42749106201 scopus 로고    scopus 로고
    • Re-examination of deuterium effect on negative bias temperature instability in ultra-thin gate oxides
    • Y. Mitani, H. Satake. Re-examination of deuterium effect on negative bias temperature instability in ultra-thin gate oxides. ICICDT 2006.
    • (2006) ICICDT
    • Mitani, Y.1    Satake, H.2
  • 51
    • 33947698378 scopus 로고    scopus 로고
    • Evidence for bulk trap generation during NBTI Phenomenon in pMOSFETs with ultrathin SiON gate dielectrics
    • Jan
    • S. Tsujikawa, J. Yugami. Evidence for bulk trap generation during NBTI Phenomenon in pMOSFETs with ultrathin SiON gate dielectrics. IEEE Trans. on Electron Devices, 53(1): Jan 2006.
    • (2006) IEEE Trans. on Electron Devices , vol.53 , Issue.1
    • Tsujikawa, S.1    Yugami, J.2
  • 52
    • 33750526881 scopus 로고    scopus 로고
    • Recovery of the NBTI-stressed ultrathin gate p-MOSFET: The role of deep-level hole traps
    • Nov
    • D. S. Ang, S. Wang. Recovery of the NBTI-stressed ultrathin gate p-MOSFET: The role of deep-level hole traps. IEEE Electron Device Lett., 27(11): Nov 2006.
    • (2006) IEEE Electron Device Lett. , vol.27 , Issue.11
    • Ang, D.S.1    Wang, S.2
  • 53
    • 28744435490 scopus 로고    scopus 로고
    • VLSI
    • N. Kimizuka et al. VLSI 1999.
    • (1999)
    • Kimizuka, N.1
  • 58
    • 34250753812 scopus 로고    scopus 로고
    • Physical modeling of negative bias temperature instabilities for predictive extrapolation
    • 44th Ann. IRPS, San Jose, California
    • V. Huard, C. R. Parthasarathy, C. Guerin, M. Denais. Physical modeling of negative bias temperature instabilities for predictive extrapolation. 44th Ann. IRPS, San Jose, California, 2006.
    • (2006)
    • Huard, V.1    Parthasarathy, C.R.2    Guerin, C.3    Denais, M.4
  • 60
    • 0036932280 scopus 로고    scopus 로고
    • NBTI mechanism in ultra-thin gate dielectric-nirogen-originated mechanism in SiON
    • Y. Mitani, M. Nagamine, H. Satake, A. Toriumi. NBTI mechanism in ultra-thin gate dielectric-nirogen-originated mechanism in SiON. IEDM 2002.
    • (2002) IEDM
    • Mitani, Y.1    Nagamine, M.2    Satake, H.3    Toriumi, A.4
  • 62
    • 23544473596 scopus 로고    scopus 로고
    • Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFET devices of ultrathin gate dielectrics
    • C. Liu et al. Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFET devices of ultrathin gate dielectrics. IEDM 2001.
    • (2001) IEDM
    • Liu, C.1
  • 63
    • 3342938427 scopus 로고    scopus 로고
    • Neighboring effect in nitrogen-enhanced negative bias temperature instability
    • Tokyo, Japan
    • S. S. Tan et al. Neighboring effect in nitrogen-enhanced negative bias temperature instability. Int. Conf. on Solid State Devices and Materials, Tokyo, Japan, 2003: pp 70-71.
    • (2003) Int. Conf. on Solid State Devices and Materials , pp. 70-71
    • Tan, S.S.1
  • 64
    • 0037464212 scopus 로고    scopus 로고
    • Nitrogen-enhanced negative bias temperature instability: An insight by experiment and first-principle calculations
    • 24Mar
    • S. S. Tan et al. Nitrogen-enhanced negative bias temperature instability: An insight by experiment and first-principle calculations. APL, 82(12): 24Mar 2003.
    • (2003) APL , vol.82 , Issue.12
    • Tan, S.S.1
  • 65
    • 0037434245 scopus 로고    scopus 로고
    • Relation between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias temperature stress condition
    • S. S. Tan et al. Relation between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias temperature stress condition. APL, 82: 2003, pp 269-271.
    • (2003) APL , vol.82 , pp. 269-271
    • Tan, S.S.1
  • 66
    • 0041340533 scopus 로고    scopus 로고
    • Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
    • D. K. Schroder, J. A. Babcock. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing. J. Appl. Phys., 94(1): 20031-18.
    • J. Appl. Phys. , vol.94 , Issue.1 , pp. 20031-20018
    • Schroder, D.K.1    Babcock, J.A.2
  • 67
    • 0842266651 scopus 로고    scopus 로고
    • Technical Digest
    • M. A. Alam. Technical Digest. IEDM 2003, p 345.
    • (2003) IEDM , pp. 345
    • Alam, M.A.1
  • 68
    • 33646400607 scopus 로고    scopus 로고
    • Analytical reaction-diffusion model and the modeling of nitrogen-enhanced negative bias temperature instability
    • J. B. Yang, T. P. Chen, S. S. Tan, L. Chan. Analytical reaction-diffusion model and the modeling of nitrogen-enhanced negative bias temperature instability. App. Phys. Lett., 88: 2006, p 172109.
    • (2006) App. Phys. Lett. , vol.88 , pp. 172109
    • Yang, J.B.1    Chen, T.P.2    Tan, S.S.3    Chan, L.4
  • 69
    • 36449005547 scopus 로고
    • Mechanism of negative-bias temperature instability
    • Feb 1
    • C. E. Blat, E. H. Nicollian, E. H. Poindexter. Mechanism of negative-bias temperature instability. J. Appl. Phys., 69(3): Feb 1 1991.
    • (1991) J. Appl. Phys. , vol.69 , Issue.3
    • Blat, C.E.1    Nicollian, E.H.2    Poindexter, E.H.3
  • 70
    • 0037972838 scopus 로고    scopus 로고
    • Evidence for hydrogen-related defects during NBTI stress in p-MOSFETs
    • V. Huard, F. Monsieur, G. Ribes, S. Bruyere. Evidence for hydrogen-related defects during NBTI stress in p-MOSFETs. IRPS 2003.
    • (2003) IRPS
    • Huard, V.1    Monsieur, F.2    Ribes, G.3    Bruyere, S.4
  • 71
    • 0035397517 scopus 로고    scopus 로고
    • The effects of fluorine on parametrics and reliability in a 0.18-m 3.5/ 6.8 nm dual gate oxide CMOS technology
    • July
    • T. B. Hook et al. The effects of fluorine on parametrics and reliability in a 0.18-m 3.5/ 6.8 nm dual gate oxide CMOS technology. IEEE Trans. On Electron Devices, 48(7): July 2001.
    • (2001) IEEE Trans. On Electron Devices , vol.48 , Issue.7
    • Hook, T.B.1
  • 72
    • 84889457221 scopus 로고    scopus 로고
    • IEDM
    • C. Liu et al. IEDM 2001.
    • (2001)
    • Liu, C.1
  • 73
    • 84889310746 scopus 로고    scopus 로고
    • IEDM
    • A. Krishnan et al. IEDM 2001.
    • (2001)
    • Krishnan, A.1
  • 74
    • 0020240615 scopus 로고
    • Threshold voltage variation in very small MOS transistors due to local dopant fluctuations
    • Proc. of the Sym. on VLSI Technology: Digest of Technical Papers:
    • T. Hagivaga, K. Yamaguchi, S. Asai. Threshold voltage variation in very small MOS transistors due to local dopant fluctuations, 1982 Proc. of the Sym. on VLSI Technology: Digest of Technical Papers: pp 46-47.
    • (1982) , pp. 46-47
    • Hagivaga, T.1    Yamaguchi, K.2    Asai, S.3
  • 75
    • 0028548950 scopus 로고
    • Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFETs
    • T. Mizuno, J. Okamura, A. Toriumi. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFETs. IEEE Trans. on Electron Devices, 41(11): 1994, pp 2216-2220.
    • (1994) IEEE Trans. on Electron Devices , vol.41 , Issue.11 , pp. 2216-2220
    • Mizuno, T.1    Okamura, J.2    Toriumi, A.3
  • 76
    • 0022891057 scopus 로고
    • Characterisation and modeling of mismatch in MOS transistors for precision analogue design
    • K. R. Lakshmikumar, R. A. Hadaway, M. A. Copeland. Characterisation and modeling of mismatch in MOS transistors for precision analogue design. IEEE J. Solid State Circuits, SC-, 21: 1986, pp 1057-1066.
    • (1986) IEEE J. Solid State Circuits, SC- , vol.21 , pp. 1057-1066
    • Lakshmikumar, K.R.1    Hadaway, R.A.2    Copeland, M.A.3
  • 77
    • 84886448051 scopus 로고    scopus 로고
    • Channel engineering for the reduction of random-dopant-placement-induced threshold voltage fluctuations
    • K. Takeuchi, T. Tatsumi, A. Furukawa. Channel engineering for the reduction of random-dopant-placement-induced threshold voltage fluctuations. IEDM Technical Digest 1997, pp 841-844.
    • (1997) IEDM Technical Digest , pp. 841-844
    • Takeuchi, K.1    Tatsumi, T.2    Furukawa, A.3
  • 78
    • 0032320827 scopus 로고    scopus 로고
    • Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 mMOSFETs: A 3D 'atomistic' simulation study
    • A. Asenov. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 mMOSFETs: A 3D 'atomistic' simulation study. IEEE Trans. on Electron Devices., 45(12): 1998, pp 2505-2513.
    • (1998) IEEE Trans. on Electron Devices , vol.45 , Issue.12 , pp. 2505-2513
    • Asenov, A.1
  • 79
    • 0031630542 scopus 로고    scopus 로고
    • Channel Size Dependence of Dopant-Induced Threshold Voltage Fluctuations
    • K. Takeuchi. Channel Size Dependence of Dopant-Induced Threshold Voltage Fluctuations, 1998 Sym. on VLSI Technology Digest, pp. 72-73.
    • (1998) Sym. on VLSI Technology Digest , pp. 72-73
    • Takeuchi, K.1
  • 80
    • 0041358085 scopus 로고    scopus 로고
    • The statistics of NBTI-induced VT and K mismatch shifts in pMOSFETs
    • Stewart Rauch. The statistics of NBTI-induced VT and K mismatch shifts in pMOSFETs. IEEE Trans. on Device and Materials Reliability, 2(4): 2002, pp 89-93.
    • (2002) IEEE Trans. on Device and Materials Reliability , vol.2 , Issue.4 , pp. 89-93
    • Stewart Rauch1
  • 81
    • 0032320827 scopus 로고    scopus 로고
    • Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 mm MOSFETs: A 3D 'atomistic' simulation study
    • A. Asenov. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 mm MOSFETs: A 3D 'atomistic' simulation study. IEEE Trans. on Electron Devices, 45(12): 1998, pp 2505-2513.
    • (1998) IEEE Trans. on Electron Devices , vol.45 , Issue.12 , pp. 2505-2513
    • Asenov, A.1
  • 82
    • 19944380462 scopus 로고    scopus 로고
    • Negative bias temperature instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics
    • B. Kaczer, V. Arkhipov, M. Jurczak, G. Groeseneken. Negative bias temperature instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics. Microelectronic Engineering, 80: 2005, pp 122-125.
    • (2005) Microelectronic Engineering , vol.80 , pp. 122-125
    • Kaczer, B.1    Arkhipov, V.2    Jurczak, M.3    Groeseneken, G.4
  • 83
    • 0000712043 scopus 로고    scopus 로고
    • Time-resolved EPR of spin-polarized mobile H atoms in amorphous silica: The involvement of small polarons
    • I. A. Shkrob, A. D. Trifunac. Time-resolved EPR of spin-polarized mobile H atoms in amorphous silica: The involvement of small polarons. Phys. Rev. B, 54: 1996, pp 15073-15078.
    • (1996) Phys. Rev. B , vol.54 , pp. 15073-15078
    • Shkrob, I.A.1    Trifunac, A.D.2
  • 86
    • 84889457221 scopus 로고    scopus 로고
    • IEDM
    • Liu et al. IEDM 2001.
    • (2001)
    • Liu1
  • 87
    • 0141426793 scopus 로고    scopus 로고
    • Experimental evidence for the generation of bulk traps by negative bias temperature stress and their impact on the integrity of direct tunneling gate dilectrics
    • S. Tsujikawa, K. Watanabe, R. Tsuchiya, K. Ohnishi, J. Yugami. Experimental evidence for the generation of bulk traps by negative bias temperature stress and their impact on the integrity of direct tunneling gate dilectrics. VLSI 2003.
    • (2003) VLSI
    • Tsujikawa, S.1    Watanabe, K.2    Tsuchiya, R.3    Ohnishi, K.4    Yugami, J.5
  • 89
    • 0842309776 scopus 로고    scopus 로고
    • Universal recovery behavior of negative bias temperature instability
    • S. Rangan, N. Mielke, E. C. C. Yeh. Universal recovery behavior of negative bias temperature instability, IEDM 2003.
    • (2003) IEDM
    • Rangan, S.1    Mielke, N.2    Yeh, E.C.C.3
  • 91
    • 84889459668 scopus 로고    scopus 로고
    • IEDM
    • M. Denais et al. IEDM 2004.
    • (2004)
    • Denais, M.1
  • 95
    • 84889267716 scopus 로고    scopus 로고
    • IRPS tutorial
    • G. La Rosa et al. IRPS tutorial. 2002.
    • (2002)
    • La Rosa, G.1
  • 96
    • 34250709562 scopus 로고    scopus 로고
    • Lifetime enhancement under high frequency NBTI measured on ring oscillators
    • T. Nigam, E. B. Harris. Lifetime enhancement under high frequency NBTI measured on ring oscillators. IRPS 2006.
    • (2006) IRPS
    • Nigam, T.1    Harris, E.B.2
  • 98
    • 0037660903 scopus 로고    scopus 로고
    • On the degradation of p-MOSFETs in analog and RG circuits under inhomogeneous negative bias temperature stress
    • C. Schlunder, R. Brederlow, B. Ankele, A. Lill, K. Goser, R. Thewes. On the degradation of p-MOSFETs in analog and RG circuits under inhomogeneous negative bias temperature stress. IRPS 2003.
    • (2003) IRPS
    • Schlunder, C.1    Brederlow, R.2    Ankele, B.3    Lill, A.4    Goser, K.5    Thewes, R.6
  • 104
    • 0000564754 scopus 로고    scopus 로고
    • Interfacial hardness enhancement in deuterium annealed 0.25 mm m channel metal oxide semiconductor transistors
    • R. A. B. Devine, J.-L. Autran, W. L. Warren, K. L. Vanheusdan, J.-C. Rostaing. Interfacial hardness enhancement in deuterium annealed 0.25 mm m channel metal oxide semiconductor transistors. Appl. Phys. Lett., 70(22): 1997, pp 2999-3001.
    • (1997) Appl. Phys. Lett. , vol.70 , Issue.22 , pp. 2999-3001
    • Devine, R.A.B.1    Autran, J.-L.2    Warren, W.L.3    Vanheusdan, K.L.4    Rostaing, J.-C.5
  • 105
    • 0842266644 scopus 로고    scopus 로고
    • A new observation of enhanced bias temperature instability in thin gate oxide p-MOSFET
    • S. Mahapatra, P. B. Kumar, M. A. Alam. A new observation of enhanced bias temperature instability in thin gate oxide p-MOSFET. IEDM Tech. Digest: 2003, pp 337-340.
    • (2003) IEDM Tech. Digest , pp. 337-340
    • Mahapatra, S.1    Kumar, P.B.2    Alam, M.A.3
  • 106
    • 33745686653 scopus 로고    scopus 로고
    • On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stress
    • July
    • S. Mahapatra, D. Saha, D. Varghese, P. B. Kumar. On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stress. IEEE Trans. On Electron Devices, 53(7): July 2006.
    • (2006) IEEE Trans. On Electron Devices , vol.53 , Issue.7
    • Mahapatra, S.1    Saha, D.2    Varghese, D.3    Kumar, P.B.4
  • 107
    • 33847745777 scopus 로고    scopus 로고
    • On the dispersive versus arrhenius temperature activation of NBTI time evolution in plasma nitrided gate oxides: Measurements, theory, and implications
    • D. Varghese, D. Saha, S. Mahapatra, K. Ahmed, F. Nouri, M. Alam. On the dispersive versus arrhenius temperature activation of NBTI time evolution in plasma nitrided gate oxides: Measurements, theory, and implications. IEDM 2005.
    • (2005) IEDM
    • Varghese, D.1    Saha, D.2    Mahapatra, S.3    Ahmed, K.4    Nouri, F.5    Alam, M.6
  • 108
    • 84889402154 scopus 로고
    • JAP
    • M. L. Reed et al. JAP 1988, p 5776.
    • (1988) , pp. 5776
    • Reed, M.L.1
  • 110
    • 33748510388 scopus 로고    scopus 로고
    • Insight into the suppressed recovery of NBTI-stressed ultrathin oxynitride gate pMOSFET
    • Sep
    • D. S. Ang, S. Wang. Insight into the suppressed recovery of NBTI-stressed ultrathin oxynitride gate pMOSFET. IEEE Electron Device Lett., 27(9): Sep 2006.
    • (2006) IEEE Electron Device Lett. , vol.27 , Issue.9
    • Ang, D.S.1    Wang, S.2
  • 111
    • 33646253424 scopus 로고    scopus 로고
    • Observation of suppressed interface state relaxation under positive gate biasing of the ultrathin oxynitride gate p-MOSFET subjected to negative-bias temperature stressing
    • D. S. Ang. Observation of suppressed interface state relaxation under positive gate biasing of the ultrathin oxynitride gate p-MOSFET subjected to negative-bias temperature stressing. IEEE Electron Device Lett, 27(5): 2006.
    • (2006) IEEE Electron Device Lett , vol.27 , Issue.5
    • Ang, D.S.1
  • 112
    • 34250739882 scopus 로고    scopus 로고
    • Impact of NBTI induced statistical variation to SRAM cell stability
    • G. La Rosa, W. L. Ng, S. Rauch, R. Wong, J. Sudijono. Impact of NBTI induced statistical variation to SRAM cell stability. IRPS 2006.
    • (2006) IRPS
    • La Rosa, G.1    Ng, W.L.2    Rauch, S.3    Wong, R.4    Sudijono, J.5
  • 113
    • 84889411699 scopus 로고    scopus 로고
    • Interface traps and oxide charges during NBTI stress in pMOSFETs
    • 2002, IRW final report.
    • V. Huard et al. Interface traps and oxide charges during NBTI stress in pMOSFETs, 2002 IRW final report.
    • Huard, V.1
  • 114
    • 37549070996 scopus 로고    scopus 로고
    • Atomic-scale defects involved in the negative-bias temperature instability.
    • Dec
    • J. P. Campbell et al. Atomic-scale defects involved in the negative-bias temperature instability. IEEE Trans. Device and Materials Reliability, 7(4): Dec 2007.
    • (2007) IEEE Trans. Device and Materials Reliability , vol.7 , Issue.4
    • Campbell, J.P.1
  • 115
    • 84889346025 scopus 로고    scopus 로고
    • Negative bias temperature instability (NBTI): Physics, materials, process, and circuit issues
    • Tutorial. IRPS
    • D. K. Schroder. Negative bias temperature instability (NBTI): Physics, materials, process, and circuit issues., Tutorial. IRPS 2005.
    • (2005)
    • Schroder, D.K.1
  • 116
    • 19044366271 scopus 로고    scopus 로고
    • Mechanism of negative bias temperature instability in CMOS Devices: Degradation, recovery and impact of nitrogen
    • S. Mahapatra, M. A. Alam, P. Bharath Kumar, T. R. Daleil, D. Saha. Mechanism of negative bias temperature instability in CMOS Devices: Degradation, recovery and impact of nitrogen. IEDM 2004.
    • (2004) IEDM
    • Mahapatra, S.1    Alam, M.A.2    Bharath Kumar, P.3    Daleil, T.R.4    Saha, D.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.