Material dependence of hydrogen diffusion: Implications for NBTI degradation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 688-691

  Krishnan, A T ^a   Chancellor, C ^a   Chakravarthi, S ^a   Nicollian, P E ^a   Reddy, V ^a   Varghese, A ^a   Khamankar, R B ^a   Krishnan, S ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; GATES (TRANSISTOR); LEAKAGE CURRENTS; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

GATE VOLTAGE; OXIDE THICKNESS; REACTION-DIFFUSION (R-D) FRAMEWORK;

HYDROGEN;

EID: 33847757101     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2005.1609445     Document Type: Conference Paper

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