Physical modeling of negative bias temperature instabilities for predictive extrapolation

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 733-734

  Huard, V ^a   Parthasarathy, C R ^b   Guerin, C ^b   Denais, M ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b ST MicroelectronicsCrolles2 Alliance ^*  (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34250753812     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251348     Document Type: Conference Paper

References (4)

1. T. Yang et al., in proc. Symp. on VLSI techn. (2005).
2. A. Haggag et al. , in proc. Int. Reliability Physics Symp., p. 271 (2001).
3. F.P. Heiman and G. Warfield, IEEE Trans. Elec. Dev., vol. 12, 167 (1965).
4. M. Denais, V.Huard et al., in proc. IEDM. (2004).