Density of states of Pb1 Si/SiO2 interface trap centers

Applied Physics Letters

Volumn 80, Issue 11, 2002, Pages 1945-1947

  Campbell, J P ^a   Lenahan, P M ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION ENERGY; DENSITY OF STATE; ELECTRON SPIN RESONANCE MEASUREMENTS; INTERFACE TRAPS; INTERFACIAL DEFECT; SILICON BAND GAP;

DEFECTS; ELECTRONIC PROPERTIES; ENERGY GAP; MAGNETIC MOMENTS;

DEFECT DENSITY;

EID: 79956006048     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1461053     Document Type: Article

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