Insight into the suppressed recovery of NBTI-stressed ultrathin oxynitride gate pMOSFET

IEEE Electron Device Letters

Volumn 27, Issue 9, 2006, Pages 755-758

  Ang, D S ^a   Wang, S ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Charge pumping (CP) current; Dynamic or ac stress; Hole trapping; Negative bias temperature instability (NBTI); Nitrided oxide; Oxynitride

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; GATES (TRANSISTOR); ULTRATHIN FILMS;

DYNAMIC STRESS; NEGATIVE-BIAS-TEMPERATURE INSTABILITY (NBTI); NITRIDED OXIDE; OXYNITRIDE;

MOSFET DEVICES;

EID: 33748510388     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.880841     Document Type: Article

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