Negative bias temperature instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 122-125

  Kaczer, B ^a   Arkhipov, V ^a   Jurczak, M ^a   Groeseneken, G ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Dispersive transport; Hydrogen; Negative bias temperature instability; Silicon dioxide; Silicon oxynitride

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); HYDROGEN; LEAKAGE CURRENTS; SILICA; THERMODYNAMIC STABILITY;

DISPERSIVE TRANSPORT; EQUIVALENT OXIDE THICKNESS (EOT); NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); SILICON OXYNITRIDE;

DIELECTRIC MATERIALS;

EID: 19944380462     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.054     Document Type: Conference Paper

References (10)

1. Y. Mitani, M. Nagamine, H. Satake, and A. Toriumi IEDM Tech. Digest 2002 509
2. B.E. Deal, M. Sklar, A.S. Grove, and E.H. Snow J. Electrochem. Soc. 114 1967 266
3. B. Kaczer, V. Arkhipov, R. Degraeve, N. Collaert, G. Groeseneken, and M. Goodwin Appl. Phys. Lett. 86 2005 143506
4. M.A. Alam, and S. Mahapatra Microel. Reliab. 45 2005 71
5. M. Denais, A. Bravaix, V. Huard, C. Parthasarathy, G. Ribes, F. Perrier, Y. Rey-Tauriac, and N. Revil IEDM Tech. Digest 2004 109
6. B. Kaczer, V. Arkhipov, R. Degraeve, N. Collaert, G. Groeseneken, and M. Goodwin, Internat. Reliab. Phys. Symp. (2005) 381.
7. S. Zafar, B. H. Lee, J. Stathis, A. Callegari, and T. Ning, VLSI Symp. Proc. (2004) 208.
8. M. Houssa, M. Aoulaiche, S. De Gendt, G. Groeseneken, M.M. Heyns, and A. Stesmans Appl. Phys. Lett. 86 2005 093506
9. th bi-annual INFOS Conference (2003) PS19.
10. D.S. Ang, and K.L. Pey IEEE Electron Dev. Lett. 25 2004 637