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Volumn , Issue , 2007, Pages 258-263

Ballistic phonon enhanced NBTI

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; HEAT LOSSES; HEAT PROBLEMS; PHONON SCATTERING; RELIABILITY ANALYSIS; THERMAL ENERGY; THERMODYNAMIC STABILITY;

EID: 34548746935     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369902     Document Type: Conference Paper
Times cited : (12)

References (14)
  • 6
    • 10044256253 scopus 로고    scopus 로고
    • P. Chap.arala,.D. Brisbin, Impact of NBTI and HCI on PMOSFET threshold voltage drift. Microelectronics Reliability 45(1), 13-18(2005).
    • P. Chap.arala,.D. Brisbin, "Impact of NBTI and HCI on PMOSFET threshold voltage drift. " Microelectronics Reliability 45(1), 13-18(2005).
  • 8
    • 0034430829 scopus 로고    scopus 로고
    • P, Chaparala, J. Shibley, P. Lim, Threshold voltage drift in PMOSFETS due to NBTI and HCI. Final Report, IEEE Int. Integrated Reliability Workshop (IRW) 2000, pp95-97.
    • P, Chaparala, J. Shibley, P. Lim, "Threshold voltage drift in PMOSFETS due to NBTI and HCI." Final Report, IEEE Int. Integrated Reliability Workshop (IRW) 2000, pp95-97.
  • 11
    • 85081451594 scopus 로고    scopus 로고
    • Low Voltage Hot-Carrier Issues in Deep-sub-micron Metal- Oxide-Semiconductor Field-EffectTransistors
    • Ph.D. Thesis, Depart. Electronics & Information Technology, University of Munich
    • A. Kottantharayil, "Low Voltage Hot-Carrier Issues in Deep-sub-micron Metal- Oxide-Semiconductor Field-EffectTransistors" Ph.D. Thesis, 2002, Depart. Electronics & Information Technology, University of Munich.
    • (2002)
    • Kottantharayil, A.1
  • 12
    • 23844493372 scopus 로고    scopus 로고
    • Hole energy dependent interface trap generation in MOSFET Si-SiO2 interface
    • D. Varghese, S. Mahapatra, M. A. Alam, "Hole energy dependent interface trap generation in MOSFET Si-SiO2 interface." IEEE Electr. Dev. Lett., 26(8), 572-574(2005).
    • (2005) IEEE Electr. Dev. Lett , vol.26 , Issue.8 , pp. 572-574
    • Varghese, D.1    Mahapatra, S.2    Alam, M.A.3
  • 13
    • 20544437689 scopus 로고    scopus 로고
    • Enhancement of BTI degradation in pMOSFETs under high-frequency bipolar gate bias
    • S. Zhu, A. Nakajima, T. Ohashi, H. Miyake, "Enhancement of BTI degradation in pMOSFETs under high-frequency bipolar gate bias" IEEE Electr. Dev. Lett. 26(6), 387-389(2005),
    • (2005) IEEE Electr. Dev. Lett , vol.26 , Issue.6 , pp. 387-389
    • Zhu, S.1    Nakajima, A.2    Ohashi, T.3    Miyake, H.4
  • 14
    • 20344374392 scopus 로고    scopus 로고
    • Dynamic NBTI lifetime model for inverter-like waveform
    • S. S. Tan, T. P. Chen, L. Chan, "Dynamic NBTI lifetime model for inverter-like waveform, " Microelectronics Reliability 45(7-8), 1115-1118(2005),
    • (2005) Microelectronics Reliability , vol.45 , Issue.7-8 , pp. 1115-1118
    • Tan, S.S.1    Chen, T.P.2    Chan, L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.