Impact of NBTI induced statistical variation to SRAM cell stability

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 274-282

  La Rosa, Giuseppe ^a   Ng, Wee Loon ^b   Rauch, Stewart ^a   Wong, Robert ^a   Sudijono, John ^b  

^a IBM RESEARCH   (United States)

^b Chartered Semiconductors   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

PARAMETERS SHIFTS; SRAM CELLS; SRAM STABILITY;

CMOS INTEGRATED CIRCUITS; MOSFET DEVICES; PARAMETER ESTIMATION; PROGRAMMABLE LOGIC CONTROLLERS; THERMODYNAMIC STABILITY; TRANSISTORS;

STATIC RANDOM ACCESS STORAGE;

EID: 34250739882     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251228     Document Type: Conference Paper

References (6)

1. Clement Wann et al., "SRAM cell design for stability methodology", 2005 IEEE VLSI-ISA International Symposium on VLSI Technology, 2005, pg 21.
2. Azeez J Bhavnagarwala et al., "The Impact of Intrinsic Device Fluctuations on CMOS SRAM Cell Stability", IEEE Journal of Solid-State Circuits, Vol 36, No 4, April 2001, pg 658.
3. th Annual International Reliability Physics Symposium, March 2002, pg 248
4. Stewart Rauch, "The Statistics of NBTI-Induced VT and β Mismatch Shifts in pMOSFETs", IEEE Transactions on Device and Materials Reliability, Vol 2, No 4, Dec 2002, pg 89.
5. Yung-Huei Lee et al., "Effect of pMOST Bias-Temperature Instability on Circuit Reliability Performance", International Reliability Physics Symposium, 2003.
6. nd Annual IEEE International Symposium on Reliability Physics, 2004, pg 426.