Atomic-scale defects involved in the negative-bias temperature instability

IEEE Transactions on Device and Materials Reliability

Volumn 7, Issue 4, 2007, Pages 540-557

  Camphell, Jason P ^a,b,c   Lenahan, Patrick M ^a,b   Cochrane, Corey J ^b   Krishnan, Anand T ^a,d   Krishnan, Srikanth ^a,d  

^a IEEE

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d TEXAS INSTRUMENTS   (United States)

Author keywords

Dielectric materials; Magnetic resonance spectroscopy; Metal oxide silicon field effect transistors (MOSFETs); MOS integrated circuits; Negative bias temperature instability (NBTI); Paramagnetic resonance; Reliability; Reliability theory

Indexed keywords

BULK TRAPS; MOS INTEGRATED CIRCUITS; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI);

BIAS CURRENTS; DIELECTRIC MATERIALS; MAGNETIC RESONANCE SPECTROSCOPY; PARAMAGNETIC RESONANCE; RELIABILITY ANALYSIS; RELIABILITY THEORY; TEMPERATURE MEASUREMENT;

MOSFET DEVICES;

EID: 37549070996     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.911379     Document Type: Article

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