Channel engineering for the reduction of random-dopant-placement-induced threshold voltage fluctuation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 841-844

  Takeuchi, Kiyoshi ^a   Tatsumi, Toru ^a   Furukawa, Akio ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL ENGINEERING; RANDOM DOPANT PLACEMENT; THRESHOLD VOLTAGE FLUCTUATION;

CRYSTAL IMPURITIES; MOSFET DEVICES; SEMICONDUCTOR DOPING;

SEMICONDUCTOR DEVICE MODELS;

EID: 84886448051     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)