On the dispersive versus arrhenius temperature activation of NBTI time evolution in plasma nitrided gate oxides: Measurements, theory, and implications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 683-687

  Varghese, D ^a   Saha, D ^a   Mahapatra, S ^a   Ahmed, K ^b   Nouri, F ^b   Alam, M ^c  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b APPLIED MATERIALS INC   (United States)

^c PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARRHENIUS TEMPERATURE; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); POWER-LAW TIME;

ELECTRON TRAPS; INTERFACES (MATERIALS); PLASMA THEORY; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

NITRIDES;

EID: 33847745777     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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