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Applied Physics Letters

Volumn 86, Issue 14, 2005, Pages 1-3

Physical mechanisms of negative-bias temperature instability

(5) Tsetseris, L a Zhou, X J b Fleetwood, D M b Schrimpf, R D b Pantelides, S T a,c

a VANDERBILT UNIVERSITY (United States)

b VANDERBILT UNIVERSITY (United States)

c OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS TEMPERATURE INSTABILITY (BTI); DOPANTS; INTERFACE-TRAP DENSITY; NEGATIVE-BIAS TEMPERATURE INSTABILITY (NBTI);

ACTIVATION ENERGY; CHEMICAL BONDS; COMPLEXATION; DENSITY (SPECIFIC GRAVITY); FERMI LEVEL; HYDROGEN; INTERFACES (MATERIALS); MOSFET DEVICES; PASSIVATION; SILICON; STRESS ANALYSIS; SUBSTRATES; THERMAL EFFECTS;

MICROELECTRONICS;

EID: 17444381932 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1897075 Document Type: Article

Times cited : (124)

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