Re-examination of deuterium effect on negative bias temperature instability in ultra-thin gate oxides

2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06

Volumn , Issue , 2006, Pages

  Mitani, Yuichiro ^a   Satake, Hideki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEUTERIUM; ELECTRON TRAPS; GATE DIELECTRICS; MOSFET DEVICES; THERMODYNAMIC STABILITY; ULTRATHIN FILMS;

IMPACT IONIZATION PROBABILITY; INTERFACE TRAP; TRAP GENERATION;

GATES (TRANSISTOR);

EID: 42749106201     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/icicdt.2006.220806     Document Type: Conference Paper

References (18)

1. N. Kimizuka, T. Yamamoto, T. Mogami, K. Yamaguchi, K.Imai, T.Horiuchi, in Symposium on VLSI Technology, p. 73 (1999).
2. N. Kimizuka, K. Yamaguchi, K. Imai, T. lizuka, C. T. Liu, R. C. Keller, T. Horiuchi, in Symposium on VLSI Technology, p. 92 (2000).
3. G. La Rosa, F. Guarin, S. Rauch, A. Acovic, J. Lukaitis, E. Crabbe, in Proc. IEEE International Reliability Physics Symposium, p. 282 (1997).
4. K. Uwasawa, T. Yamamoto, T. Mogami, in IEEE International Electron Devices Meeting Technical Digest, p. 871 (1995).
5. T. Yamamoto, K. Uwasawa, T. Mogami, IEEE Trans. Electron Devices,p. 921 (1999).
6. Y. Mitani, M. Nagamine, H. Satake, A. Toriumi, in IEEE International Electron Devices Meeting Technical Digest, p. 509 (2002).
7. J. W. Lyding, K. Hess, and I. C. Kizilyalli, Appl. Phys. Lett, p. 2526 (1996).
8. K. Hess, I. C. Kizilyalli, and J. W. Lyding, IEEE Trans. Electron Devices, p. 406 (1998).
9. T. G. Ference, J. S. Burnham, W. F. Clark, T. B. Hook, S. W. Mittl, K. M. Watson, and L. K. Han, IEEE Trans. Electron Devices, p. 747 (1999).
10. T. B. Hook, R. Bolam, W. Clark, J. Burnham, N. Rovedo, and L. Schutz, Microelectro. Reliab., p.47 (2005).
11. G. Groeseneken, H. E. Maes, N. Beitran and R. F. De Keersmaecker, IEEE Trans. Electron Devices, p. 42 (1984).
12. Y Mitani and H. Satake, mlEEEICICDT, p. 143 (2005)
13. W. C. Lee and C. Hu, IEEE Trans. Electron Devices, p. 1366 (2001).
14. K. F. Schuegraf and C. Hu, IEEE Trans. Electron Devices, p. 761 (1994).
15. A. Kinoshita, Y. Mitani, K. Matsuzawa, H. Kawashima, C. Sutoh, J. Kurihara, T. Hiraoka, I. Hirano, M. Muta, M. Takayanagi and N. Shigyo, to be resented in IEEE International Reliability Physics Symposium (1997).
16. J. D. Bude, B. E. Weir, and P. J. Silverman, in IEEE International Electron Devices Meeting Technical Digest, p. 179 (1998).
17. K. O. Jeppson and C. M, Svennson, J. Appl. Phys., p. 2004 (1977).
18. R. Biswas, Y. -P. Li, and B. C. Pan, Appl. Phys. Lett., p. 3500 (1998).