The combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET's

IEEE Transactions on Electron Devices

Volumn 46, Issue 4, 1999, Pages 747-753

  Ference, Thomas G ^a,b   Burnham, Jay S ^a   Clark, William F ^a   Hook, Terence B ^a   Mittl, Steven W ^a   Watson, Kimball M ^a   Han, Liang Kai Kevin ^a  

^a IBM MICROELECTRONICS   (United States)

^b IBM RESEARCH   (United States)

Author keywords

Annealing, deuterium; Hot carriers; MOSFET's; ND3; Nitride; Semiconductor; SiD4; Surface states

Indexed keywords

AMMONIA; ANNEALING; DEGRADATION; DEUTERIUM COMPOUNDS; HOT CARRIERS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS;

DEUTERATED AMMONIA; DEUTERATED BARRIER NITRIDE PROCESSING; SURFACE STATES;

MOSFET DEVICES;

EID: 0032630465     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.753709     Document Type: Article

References (11)

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