Analytical reaction-diffusion model and the modeling of nitrogen-enhanced negative bias temperature instability

Applied Physics Letters

Volumn 88, Issue 17, 2006, Pages

  Yang, J B ^a   Chen, T P ^a   Tan, S S ^b   Chan, L ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DIFFUSION; MATHEMATICAL MODELS; NITRIDES; NITROGEN; OXIDES; PHASE TRANSITIONS; RATE CONSTANTS;

NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); NITRIDED GATE OXIDES; NITROGEN CONCENTRATION; REACTION-DIFFUSION (RD) MODEL;

THERMODYNAMIC STABILITY;

EID: 33646400607     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2198826     Document Type: Article

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