A New Observation of Enhanced Bias Temperature Instability in Thin Gate Oxide p-MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 337-340

  Mahapatra, S ^a   Bharath Kumar, P ^a   Alam, M A ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOLE TRAPPING; THIN GATE OXIDES;

CHEMICAL BONDS; CMOS INTEGRATED CIRCUITS; DEGRADATION; DIFFUSION; EXTRAPOLATION; GATES (TRANSISTOR); MOS CAPACITORS; SILICA; STRESSES;

MOSFET DEVICES;

EID: 0842266644     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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