Evidence for hydrogen-related defects during NBTI stress in p-MOSFETs

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2003, Pages 178-182

  Huard, V ^a   Monsieur, F ^b   Ribes, G ^b   Bruyere, S ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

Author keywords

Hole traps; Hydrogen species; Interface traps; NBTI; Reliability; Ultrathin oxides

Indexed keywords

HOLE TRAPS; INTERFACES (MATERIALS); THRESHOLD VOLTAGE; ULTRATHIN FILMS;

HYDROGEN SPECIES;

MOSFET DEVICES;

EID: 0037972838     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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