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Volumn 45, Issue 1, 2005, Pages 99-105

Degradation dynamics, recovery, and characterization of negative bias temperature instability

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ENERGY DISSIPATION; MATHEMATICAL MODELS; OPTIMIZATION; PROBLEM SOLVING; RELIABILITY; STRESS ANALYSIS; VOLTAGE MEASUREMENT;

EID: 10044271788     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.03.020     Document Type: Article
Times cited : (19)

References (14)
  • 1
    • 10044235625 scopus 로고    scopus 로고
    • EE Times, April 12
    • EE Times, April 12, 2002. Reliability fears scales up as CMOS scales down; D. Lammers, Researchers debate negative-bias effects on chips, EE Times, January 5, 2004; L. Peters, NBTL A Growing Threat to Device Reliability, Semiconductor International, March 1, 2004.
    • (2002) Reliability Fears Scales Up as CMOS Scales Down
  • 2
    • 10044289987 scopus 로고    scopus 로고
    • Researchers debate negative-bias effects on chips
    • January 5
    • EE Times, April 12, 2002. Reliability fears scales up as CMOS scales down; D. Lammers, Researchers debate negative-bias effects on chips, EE Times, January 5, 2004; L. Peters, NBTL A Growing Threat to Device Reliability, Semiconductor International, March 1, 2004.
    • (2004) EE Times
    • Lammers, D.1
  • 3
    • 10044222466 scopus 로고    scopus 로고
    • Semiconductor International, March 1
    • EE Times, April 12, 2002. Reliability fears scales up as CMOS scales down; D. Lammers, Researchers debate negative-bias effects on chips, EE Times, January 5, 2004; L. Peters, NBTL A Growing Threat to Device Reliability, Semiconductor International, March 1, 2004.
    • (2004) NBTL A Growing Threat to Device Reliability
    • Peters, L.1
  • 4
    • 0041340533 scopus 로고    scopus 로고
    • Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
    • Schroder DK, Babcock JA. Negative bias temperature instability: road to cross in deep submicron silicon semiconductor manufacturing. J Appl Phys 2003;94(1):1-18.
    • (2003) J Appl Phys , vol.94 , Issue.1 , pp. 1-18
    • Schroder, D.K.1    Babcock, J.A.2
  • 5
    • 10044269066 scopus 로고    scopus 로고
    • JP-001, JEDEC Solid State Technology Association
    • JEDEC/FSA Foundry Process Qualification Guidelines, JP-001, JEDEC Solid State Technology Association 2002. Available: (www.jedec.org).
    • (2002) JEDEC/FSA Foundry Process Qualification Guidelines
  • 7
    • 0032083910 scopus 로고    scopus 로고
    • Pitfalls of accelerated testing
    • Meeker WQ, Escobar LA. Pitfalls of accelerated testing. IEEE Trans Reliab 1998;47(2):114-8.
    • (1998) IEEE Trans Reliab , vol.47 , Issue.2 , pp. 114-118
    • Meeker, W.Q.1    Escobar, L.A.2
  • 9
    • 10044296591 scopus 로고    scopus 로고
    • Washington: IEEE
    • Technical Digest of IEDM. Washington: IEEE; 2003. p. 341, 345, 349.
    • (2003) Technical Digest of IEDM , pp. 341
  • 10
  • 11
    • 0042281583 scopus 로고    scopus 로고
    • Dynamic recovery of negative bias temperature instability in p-type metal-oxide-semiconductor field-effect transistors
    • Ershov M, Saxena S, Karbasi H, Winters S, Minehane S, Babcock J, et al. Dynamic recovery of negative bias temperature instability in p-type metal-oxide-semiconductor field-effect transistors. Appl Phys Lett 2003;83(8):1647-9.
    • (2003) Appl Phys Lett , vol.83 , Issue.8 , pp. 1647-1649
    • Ershov, M.1    Saxena, S.2    Karbasi, H.3    Winters, S.4    Minehane, S.5    Babcock, J.6
  • 13
    • 0025402306 scopus 로고
    • Relaxable damage in hot-carrier stressing of n-MOS transistors - Oxide traps in the near interfacial region of the gate oxide
    • Bourcerie M, Doyle BS, Marchetaux J-C, Soret J-C, Boudou A. Relaxable damage in hot-carrier stressing of n-MOS transistors - oxide traps in the near interfacial region of the gate oxide. IEEE Trans Electron Dev 1990;37:708-17.
    • (1990) IEEE Trans Electron Dev , vol.37 , pp. 708-717
    • Bourcerie, M.1    Doyle, B.S.2    Marchetaux, J.-C.3    Soret, J.-C.4    Boudou, A.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.