Gate leakage vs. NBTI in plasma nitrided oxides: Characterization, physical principles, and optimization

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Islam, A E ^a   Gupta, G ^b   Mahapatra, S ^b   Krishnan, A T ^c   Ahmed, K ^d   Nouri, F ^d   Oates, A ^e   Alam, M A ^a  

^a Purdue University   (United States)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^c TEXAS INSTRUMENTS   (United States)

^d APPLIED MATERIALS INC   (United States)

^e TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); ELECTRON DEVICES; MOLECULAR BEAM EPITAXY; MOS CAPACITORS; NEGATIVE TEMPERATURE COEFFICIENT; NITROGEN; NONMETALS; OPTIMIZATION; PLASMA APPLICATIONS; WATER POLLUTION;

CO-OPTIMIZATION; EFFECTIVE OXIDE THICKNESS; GATE LEAKAGES; NITRIDED OXIDES; NITROGEN CONCENTRATIONS; NOVEL DESIGN; PHYSICAL PRINCIPLES; PLASMA-NITRIDED OXIDES; POWER DISSIPATIONS; PREDICTIVE MODELING; RELIABLE PERFORMANCE; SELF-CONSISTENT MODELING;

THERMODYNAMIC STABILITY;

EID: 46049087186     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346775     Document Type: Conference Paper

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