NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-μm gate CMOS generation

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2000, Pages 92-93

  Kimizuka, N ^a   Yamaguchi, K ^a   Imai, K ^a   Iizuka, T ^a   Liu, C T ^a   Keller, R C ^a   Horiuchi, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DENSITY OF GASES; DIFFUSION IN GASES; GATES (TRANSISTOR); HYDROGEN; NITROGEN; SUBSTRATES;

NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); NITRIDATION; ULTRATHIN GATE OXIDE;

MOSFET DEVICES;

EID: 0033725308     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)