Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing

Applied Physics Letters

Volumn 68, Issue 18, 1996, Pages 2526-2528

  Lyding, J W ^a   Hess, K ^a   Kizilyalli, I C ^b  

^a United States of America   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CHEMICAL BONDS; DEUTERIUM; ELECTRIC BREAKDOWN OF SOLIDS; HOT CARRIERS; HYDROGEN; ISOTOPES; MOS DEVICES; SILICA; SILICON; SINTERING;

ELECTRICAL STRESS; GIANT ISOTOPE EFFECT; HOT ELECTRON DEGRADATION; MOS TRANSISTORS;

TRANSISTORS;

EID: 0030126232     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116172     Document Type: Article

References (10)

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3. J. W. Lyding, T.-C. Shen, J. S. Hubacek, J. R. Tucker, and G. C. Abeln, Appl. Phys. Lett. AIP 64, 2010 (1995).
4. Ph. Avouris and J. W. Lyding (private communication).
5. G. C. Abeln, T.-C. Shen, Ph. Avouris, and J. W. Lyding (unpublished).
6. I. C. Kizilyalli, M. J. Thoma, and F. L. Lytle, IEEE Trans. Semicond. Manuf. INS 8, 440 (1995).
7. J. M. Pimbley, M. Ghezzo, H. G. Parks, and D. M. Brown, in Advanced CMOS Process Technology (Academic, San Diego, 1989), Vol. 19.
8. Ph. Avouris, R. E. Walkup, A. R. Rossi, H. C. Akpati, P. Nordlander, T.-C. Shen, G. C. Abeln, and J. W. Lyding, Surf. Sci. (to be published).
9. T.-C. Shen, C. Wang, G. C. Abeln, J. R. Tucker, J. W. Lyding, Ph. Avouris, and R. E. Walkup, Science INS 268, 1590 (1995).
10. N. S. Saks and R. W. Rendell, IEEE Trans. Nucl. Sci. INS 39, 2220 (1992).