Observation of suppressed interface state relaxation under positive gate biasing of the ultrathin oxynitride gate p-MOSFET subjected to negative-bias temperature stressing

IEEE Electron Device Letters

Volumn 27, Issue 5, 2006, Pages 412-415

  Ang, D S ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Charge pumping current; Hole trapping; Negative bias temperature instability (NBTI); Nitrided oxide; Oxynitride; SiON

Indexed keywords

ELECTRIC CURRENTS; GATES (TRANSISTOR); HOLE TRAPS; SEMICONDUCTING SILICON COMPOUNDS; STRESS RELAXATION; THRESHOLD VOLTAGE;

CHARGE PUMPING CURRENT; NEGATIVE-BIAS TEMPERATURE INSTABILITY; NITRIDED OXIDE; OXYNITRIDE;

MOSFET DEVICES;

EID: 33646253424     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.873878     Document Type: Article

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