State-of-the-art flash memory devices and post-flash emerging memories

Science China Information Sciences

Volumn 54, Issue 5, 2011, Pages 1039-1060

  Lu, ChihYuan ^a   Lue, HangTing ^a   Chen, YiChou ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

3D NAND; BE SONOS; Charge trapping (CT) device; FeRAM; MRAM; NAND Flash; Non volatile memory; NOR Flash; ReRAM; VG NAND

Indexed keywords

EID: 79955851328     PISSN: 1674733X     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11432-011-4221-z     Document Type: Review

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