Stack friendly all-oxide 3D RRAM using galnZnO peripheral TFT realized over glass substrates

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Lee, M J ^a   Lee, C B ^a   Kim, S ^a   Yin, H ^a   Park, J ^a   Ahn, S E ^a   Kang, B S ^a   Kim, K H ^a   Stefanovich, G ^a   Song, I ^a   Kim, S W ^a   Lee, J H ^a   Chung, S J ^a   Kim, Y H ^a   Lee, C S ^a   Park, J B ^a   Baek, I G ^a,b   Kim, C J ^a   Park, Y ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BI STABLES; BISTABLE RESISTANCES; DEVICE CHARACTERISTICS; DEVICE FABRICATIONS; GAINZNO; GLASS SUBSTRATES; HIGH DENSITIES; INDIVIDUAL COMPONENTS; INTEGRATED DENSITIES; LOW TEMPERATURES; LOW-TEMPERATURE PROCESS; MEMORY NODES; MEMORY STRUCTURES; NEW CONCEPTS; NI CONTENTS; NON-VOLATILE DATUM; ON CHIPS; REAL ESTATES; RESISTANCE CHARACTERISTICS; RESISTANCE RANDOM ACCESS MEMORIES; SELECT TRANSISTORS; STACK STRUCTURES; XPS ANALYSIS;

ELECTRON DEVICES; FABRICATION; GLASS; PROM; RANDOM ACCESS STORAGE; SUBSTRATES; THIN FILM TRANSISTORS;

DATA STORAGE EQUIPMENT;

EID: 64549101091     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796620     Document Type: Conference Paper

References (5)

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2. M.-J. Lee, Y. Park, B.-S. Kang, S.-E. hn, C. B. Lee, K. H. Kim, W. Xianyu, G. Stefanovich, J.-H. Lee, S. J. Chung, Y.-H. Kim, C. S. Lee, J. B. Park, I. G. Baek and I. K. Yoo, "2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications'TEDM Tech. Dig., p. 771, 2007.
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5. S. I. Kim, C. J. Kim, J. C. Park, I. Song, D. H. Kang, H. Lim, S. W. Kim, E. Lee, J. C. Lee and Y. Park, "New Approach for Passivation of Ga2O3- In2O3-ZnO Thin Film Transistors" IEDM Tech. Dig., p. 583, 2007.