Nonvolatile solid-electrolyte switch embedded into Cu interconnect

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 130-131

  Sakamoto, T ^a   Tada, M ^a   Banno, N ^a   Tsuji, Y ^a   Saitoh, Y ^a   Yabe, Y ^a   Hada, H ^a   Iguchi, N ^a   Aono, M ^b  

^a NEC CORPORATION   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; CMOS COMPATIBLE; CU INTERCONNECT; DUAL DAMASCENE; ELECTRICAL BREAKDOWN; NANOBRIDGE; NONVOLATILE SOLIDS; ON-RESISTANCE; ON/OFF RATIO; OXIDATION BARRIER; THERMAL STABILITY;

ELECTROLYTES; OPTICAL INTERCONNECTS; POTENTIOMETRIC SENSORS;

ELECTROLYSIS;

EID: 71049181881     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S.Kaeriyama, et al., J. of Solid State Circuits 40, 168 (2005).
2. T.Sakamoto et al., Tech. Dig. VLSI Symp., 38 (2005) .
3. N.Banno et al., to be presented at IRPS2009.
4. N.Banno et al., Proc. IRPS, 707 (2008).