Ultra-thin phase-change bridge memory device using GeSb

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Chen, Y C ^a   Rettner, C T ^a   Raoux, S ^a   Burr, G W ^a   Chen, S H ^a   Shelby, R M ^a   Salinga, M ^a   Risk, W P ^a   Happ, T D ^a   McClelland, G M ^a   Breitwischt, M ^b   Schrott, A ^b   Philipps, J B ^a   Lee, M H ^a   Cheek, R ^b   Nirschl, T ^a   Lamorey, M ^a   Chen, C F ^a   Joseph, E ^b   Zaidi, S ^a   Yee, B ^b   Lung, H L ^a   Bergmann, R ^a   Lam, C ^b   more..

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERNATIONAL (CO); MEMORY CELLS; PHASE CHANGES;

EID: 46149125725     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346910     Document Type: Conference Paper

References (4)

1. S. Lai, T. Lowrey, IEDM Tech. Digest, 803-806, (2001).
2. M. Lankhorst, B. Ketelaars, and R. Wolters, Nature Mater., 4(4), 347, (2005).
3. T. D. Happ, M. Breitwisch, A. Schrott, et. al., Symp. VLSI Tech., 15-2, (2006).
4. L. van Pieterson, M. van Schijndel, et.al.,Appl. Phys. Lett, 83(7), 1373, (2003).