A study of stored charge interference and fringing field effects in sub-30nm charge-trapping NAND flash

2009 IEEE International Memory Workshop, IMW '09

Volumn , Issue , 2009, Pages

  Hsiao, Yi Hsuan ^a   Lue, Hang Ting ^a   Hsieh, Kuang Yeu ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

BE SONOS; Charge trapping; Fringing field effect; Interference; NAND

Indexed keywords

3D SIMULATIONS; BE-SONOS; DEVICE PERFORMANCE; ELECTRICAL FIELD; FRINGING FIELD EFFECT; FRINGING FIELD EFFECTS; GATE INTERFERENCE; INTERFERENCE; INTERFERENCE EFFECTS; NAND; NAND FLASH; PROGRAM/ERASE; SHORT-CHANNEL EFFECT; STORED CHARGE;

NANOTECHNOLOGY; THREE DIMENSIONAL COMPUTER GRAPHICS;

CHARGE TRAPPING;

EID: 70349994595     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2009.5090576     Document Type: Conference Paper

References (3)

1. K. Kim, et, al, Tech. IEDM, session 2-1, pp. 27-30, 2007.
2. I. C. Yang, et, al, Joint Non-Volatile Semiconductor Memory Workshop, session 7-5, pp. 124-125, 2008.
3. H. T. Lue, et, al,VLSI Symposia, pp. 116-117, 2008.