Fabrication of 3D trench PZT capacitors for 256Mbit FRAM device application

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 340-343

  Koo, June Mo ^a   Seo, Bum K ^b   Kim, Sukpil ^a   Shin, Sangmin ^a   Lee, Jung Hyun ^b   Baik, Hionsuck ^c   Lee, Jang Ho ^c   Lee, Jun Ho ^c   Bae, Byoung Jae ^d   Lim, Ji Eun ^d   Yoo, Dong Chul ^d   Park, Soon Oh ^d   Kim, Hee Suk ^d   Han, Hee ^e   Baik, Sunggi ^e   Choi, Jae Young ^e   Park, Yong Jun ^e   Park, Youngsoo ^a  

^a Nano Devices Laboratory   (South Korea)

^b Korea Advanced Nano Fab Center (KANC)   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d SAMSUNG Electronics   (South Korea)

^e Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; GRANULAR MATERIALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RANDOM ACCESS STORAGE; SILICON COMPOUNDS; THREE DIMENSIONAL COMPUTER GRAPHICS;

GRANULAR GRAINS; TRENCH CAPACITORS;

LEAD COMPOUNDS;

EID: 33847696935     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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2. K. Kim: "Future Emerging New Memory Technology" in plenary session, International Symposium of Integrated Ferroelectrics, Shanghai, China, 2004.
3. The International Technology Roadmap for Semiconductors: Process Integration, Devices and Structures, pp. 22, 2004.
4. J. J. Hsieh, "Influence of surface-activated reaction kinetics on low-pressure chemical vapor deposition conformality over micro features", J. Vac. Sci. Technol. B, vol. 11, pp. 78-86, 1993.
5. Y. Akiyama and N. Imaishi, "Applicability of one-dimensional diffusion model for step coverage analysis - Comparison with a simple Monte Carlo method", Appl. Phys. Lett., vol. 67, pp. 620-622, 1995.
6. 3", Appl. Phys. Lett., vol. 59, pp. 2521-2523, 1991.