Study of electron and hole injection statistics of BE-SONOS NAND Flash

2010 IEEE International Memory Workshop, IMW 2010

Volumn , Issue , 2010, Pages

  Lue, Hang Ting ^a   Hsu, Tzu Hsuan ^a   Lai, Sheng Chih ^a   Chen, Y J ^b   Chen, K F ^b   Chester, L O ^b   Huang, I J ^b   Han, T T ^b   Chen, M S ^b   Lu, W P ^b   Chen, K C ^b   Chang, C S ^c   Liaw, M H ^c   Hsieh, Kuang Yeu ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^b Technology Development Center   (Taiwan)

^c Product Engineering   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CENTROID; DEVICE VARIATIONS; ELECTRON NUMBER; FRINGING FIELD EFFECTS; HOLE INJECTION; MEMORY WINDOW; NAND FLASH; POISSON STATISTIC; STEP PULSE; TECHNOLOGY NODES;

ELECTRONS; FIELD EFFECT TRANSISTORS; HOLE TRAPS; NITRIDES; POISSON DISTRIBUTION;

ELECTRON INJECTION;

EID: 77957896767     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2010.5488308     Document Type: Conference Paper

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