Reliability model of bandgap engineered SONOS (BE-SONOS)

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Lue, Hang Ting ^a   Wang, Szu Yu ^a   Hsiao, Yi Hsuan ^a   Lai, Erh Kun ^a   Yang, Ling Wu ^a   Yang, Tahone ^a   Chen, Kuang Chao ^a   Hsieh, Kuang Yeu ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; ENERGY GAP; ERROR ANALYSIS; TUNNELING (EXCAVATION);

BAND GAPS; ERASE MECHANISM; HIGH TEMPERATURES; HOLE TUNNELING; RELIABILITY MODELING; RELIABILITY PROPERTIES; RETENTION DATA; RETENTION PROPERTIES;

EXCAVATION;

EID: 46049090436     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346822     Document Type: Conference Paper

References (7)

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