Thermally assisted switching in exchange-biased storage layer magnetic tunnel junctions

IEEE Transactions on Magnetics

Volumn 40, Issue 4 II, 2004, Pages 2625-2627

  Prejbeanu, I L ^a   Kula, W ^b   Ounadjela, K ^b   Sousa, R C ^a   Redon, O ^a   Dieny, B ^a   Nozieres J P ^a  

^a CEA GRENOBLE   (France)

^b CYPRESS SEMICONDUCTOR   (United States)

Author keywords

Antiferromagnetic materials; Metal insulator metal (MIM) devices

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; DEPOSITION; ELECTRIC CHARGE; ELECTRIC CURRENTS; HEATING; MAGNETIC FIELDS; MAGNETIC MATERIALS; NANOSTRUCTURED MATERIALS; OXIDATION; RANDOM ACCESS STORAGE; THERMAL EFFECTS; TRANSISTORS;

EXCHANGE-BIASED STORAGE LAYERS; MAGNETIC TUNNEL JUNCTIONS; METAL INSULATOR METAL (MIM) DEVICES; THERMALLY ASSISTED SWITCHING;

TUNNEL JUNCTIONS;

EID: 4444318021     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2004.830395     Document Type: Article

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