A 0.18μm 4Mb Toggling MRAM

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 995-997

  Durlam, M ^a   Addie, D ^a   Akerman, J ^a   Butcher, B ^a   Brown, P ^a   Chan, J ^a   DeHerrera, M ^a   Engel, B N ^a   Feil, B ^a   Grynkewich, G ^a   Janesky, J ^a   Johnson, M ^a   Kyler, K ^a   Molla, J ^a   Martin, J ^a   Nagel, K ^a   Ren, J ^a   Rizzo, N D ^a   Rodriguez, T ^a   Savtchenko, L ^a   Salter, J ^a   Slaughter, J M ^a   Smith, K ^a   Sun, J J ^a   Lien, M ^a   Papworth, K ^a   Shah, P ^a   Qin, W ^a   Williams, R ^a   Wise, L ^a   Tehrani, S ^a   more..

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY BARRIERS; MAGNETIC SWITCHING; MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM);

CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTORS; ELECTRIC RESISTANCE; ELECTRODES; FERROMAGNETIC MATERIALS; MAGNETIC FIELDS; MAGNETIC MOMENTS; MAGNETORESISTANCE; NETWORKS (CIRCUITS); SWITCHING; TRANSISTORS;

RANDOM ACCESS STORAGE;

EID: 17644447010     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. M. Durlam, et al., 2002 Symposium on VLSI circuits, IEEE, 158-161, June 2002.
2. S. Tehrani, et al., "Magnetoresistive Random Access Memory Using Magnetic Tunnel Junctions", Proceedings of the IEEE, 703-714, May 2003.
3. US patent 6,545,906 B1