A novel BE-SONOS NAND flash using non-cut trapping layer with superb reliability

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Hsieh, Chih Chang ^a   Lue, Hang Ting ^a   Chang, Kuo Pin ^a   Hsiao, Yi Hsuan ^a   Hsu, Tzu Hsuan ^a   Chen, Chih Ping ^a   Chen, Yin Jen ^a   Chen, Kuan Fu ^a   Lo, Chester ^a   Han, Tzung Ting ^a   Chen, Ming Shiang ^a   Lu, Wen Pin ^a   Wang, Szu Yu ^a   Liao, Jeng Hwa ^a   Hong, Shih Ping ^a   Hsu, Fang Hao ^a   Yang, Tahone ^a   Chen, Kuang Chao ^a   Hsieh, Kuang Yeu ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE MIGRATION; CHARGE RETENTION; CHIP-LEVEL; CYCLING ENDURANCE; ETCHING PROFILE; KEY PROCESS; LATERAL SPREAD; NAND FLASH; TRAPPING LAYERS;

DURABILITY; ELECTRON DEVICES; RELIABILITY; SILICON NITRIDE;

CHARGE TRAPPING;

EID: 79951818911     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703303     Document Type: Conference Paper

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