Irreversible modification of Ge2Sb2Te5 phase change material by nanometer-thin Ti adhesion layers in a device-compatible stack

Applied Physics Letters

Volumn 90, Issue 5, 2007, Pages

  Cabral Jr , C ^a   Chen, K N ^a   Krusin Elbaum, L ^a   Deline, V ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; GERMANIUM COMPOUNDS; NANOSTRUCTURED MATERIALS; STACKING FAULTS; STRESS ANALYSIS; TITANIUM COMPOUNDS;

BINARY PHASES; FILM-STACK STRESS; MEMORY CELL; PHASE-CHANGE BASED MEMORY;

PHASE CHANGING CIRCUITS;

EID: 33846965206     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2450656     Document Type: Article

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