Three dimensionally stacked NAND flash memory technology using stacking single crystal Si layers on ILD and TANOS structure for beyond 30nm node

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Jung, Soon Moon ^a   Jang, Jaehoon ^a   Cho, Wonseok ^a   Cho, Hoosung ^a   Jeong, Jaehun ^a   Chang, Youngchul ^a   Kim, Jonghyuk ^a   Rah, Youngseop ^a   Son, Yangsoo ^a   Park, Junbeom ^a   Song, Min Sung ^a   Kim, Kyoung Hon ^a   Lim, Jin Soo ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRON DEVICES; NAND CIRCUITS; SILICON; SILICON WAFERS; SINGLE CRYSTALS;

CRYSTAL SI; NAND FLASH MEMORIES;

FLASH MEMORY;

EID: 46049113542     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346902     Document Type: Conference Paper

References (3)

1. Kinam Kim, IEDM Tech. Dig., pp 323-326, 2005
2. Soon-Moon Jung et al, IEDM Tech. Dig., pp 265-268, 2004
3. Chang-Hyun Lee et al, Symp. On VLSI Technology, pp 26-27, 2006