Ultimate accuracy for the NAND flash program algorithm due to the electron injection statistics

IEEE Transactions on Electron Devices

Volumn 55, Issue 10, 2008, Pages 2695-2702

  Monzio Compagnoni, Christian ^a,b   Spinelli, Alessandro S ^a,b,c   Gusmeroli, Riccardo ^a,b   Beltrami, Silvia ^d   Ghetti, Andrea ^d   Visconti, Angelo ^d  

^a POLITECNICO DI MILANO   (Italy)

^b Italian University Nano Electronics Team IUNET   (Italy)

^c CNR   (Italy)

^d Numonyx   (Italy)

Author keywords

Electron injection statistics; Flash memories; Fowler Nordheim (FN) tunneling; Semiconductor device modeling

Indexed keywords

BOOLEAN FUNCTIONS; ELECTRON INJECTION; MEASUREMENT THEORY; REGRESSION ANALYSIS; STATISTICAL METHODS; STATISTICS;

ELECTRON INJECTION STATISTICS; FLASH MEMORIES; FOWLER-NORDHEIM (FN) TUNNELING; SEMICONDUCTOR DEVICE MODELING;

ELECTRONS;

EID: 53649106367     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2003230     Document Type: Article

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