A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND flash using junction-free buried channel BE-SONOS device

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 131-132

  Lue, Hang Ting ^a   Hsu, Tzu Hsuan ^a   Hsiao, Yi Hsuan ^a   Hong, S P ^a   Wu, M T ^a   Hsu, F H ^a   Lien, N Z ^a   Wang, Szu Yu ^a   Hsieh, Jung Yu ^a   Yang, Ling Wu ^a   Yang, Tahone ^a   Chen, Kuang Chao ^a   Hsieh, Kuang Yeu ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BURIED CHANNELS; FREE MEMORY; FREE STRUCTURES; NAND FLASH; READ CURRENT; SONOS DEVICES; ULTRA-HIGH;

THREE DIMENSIONAL;

EID: 77957859786     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556199     Document Type: Conference Paper

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4. H. T. Lue, et al, VLSI Symposia, pp. 224-225, 2009.
5. A. Hubert, et al, IEDM, pp. 637-640, 2009.
6. T. H. Hsu, et al, IEDM, pp. 629-632, 2009.